Quantum tunneling and other quantum effects are big hurdles to future, smaller chip design. Currently they define the lower limits to what can be designed. But what if we utilize those strange properties instead of fighting them?

MIT Scientists designed new transistors to utilize quantum tunneling and quantum confinement. They achieve quantum tunneling in a way that lets transistors switch on with much less voltage. They also utilize quantum confinement, where the nanowire’s cramped dimensions tweak the properties of the materials.

Combining those effects let the MIT get blazing fast switching times using very little voltage. Testing showed their slope of switching voltage was steeper than conventional silicon’s limits resulting in around 20 times better performance than other tunneling transistors.

Researchers admit there is still a long way to go to make this commercially viable; but it’s the first steps beyond traditional design and into the quantum realm.

Articles:

• https://www.techspot.com/news/105454-mit-3d-nanoscale-transistors-use-quantum-tunneling-design.html
• https://www.techspot.com/news/104039-mit-scientists-develop-new-transistor-switches-nanoseconds-lasts.html